FQP2N60C Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQP2N60C Datasheet PDF : 10 Pages
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Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
100
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
12
10
8
VGS = 10V
6
4
V = 20V
GS
2
※ Note : TJ = 25℃
0
0
1
2
3
4
5
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
500
450
400
350
300
250
200
150
100
50
0
10-1
C
iss
C
oss
C
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss
gd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
100
25oC
-55oC
10-1
2
※ Notes :
1.
2.
2V5D0Sμ=s40PVulse
Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
100
150℃
25℃
※ Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
10-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
V = 120V
DS
V = 300V
DS
8
V = 480V
DS
6
4
2
※ Note : ID = 2A
0
0
2
4
6
8
10
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. A, September 2003
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