FQP6N90C(2003) Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQP6N90C Datasheet PDF : 10 Pages
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Typical Characteristics
Top : 15.V0GVS
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
4.5
4.0
V = 10V
3.5
GS
V = 20V
3.0
GS
2.5
2.0
※ Note : TJ = 25℃
1.5
0
3
6
9
12
15
18
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1500
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
1000
500
C
oss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
V25DS0μ=s50PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 180V
DS
10
V = 450V
DS
V = 720V
DS
8
6
4
2
※ Note : ID = 6A
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, April 2003
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