13N50CF Просмотр технического описания (PDF) - Fairchild Semiconductor
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13N50CF Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VIDG=S =2500VμA
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
102
Operation in This Area
is Limited by R DS(on)
10 μs
100 μs
101
1 ms
10 ms
100 ms
100
DC
10-1
10-2
100
※ Notes :
1. TC = 25 oC
2.
3.
TSJin=gl1e5P0uolCse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1.
2.
IVDG=S
= 10 V
6.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
D =0.5
100
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
sin g le pu lse
1 0 -2
※ N otes :
1.
2.
3.
ZD θu JtCy(
T JM -
t) = 2.58 ℃ /W M
Fa
TC
ct
=
or,
PD
MD*=Zt1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q uare W ave P u lse D uration [se c]
Figure 11. Transient Thermal Response Curve
©2006 Fairchild Semiconductor Corporation
4
FQPF13N50CF Rev. C2
www.fairchildsemi.com
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