FQD2N90 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQD2N90 Datasheet PDF : 9 Pages
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FQD2N90 / FQU2N90
N-Channel QFET® MOSFET
900 V, 1.7 A, 7.2 Ω
January 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V,
ID = 0.85 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
*
4
4
*
<
4
<
!5
8
Parameter
*
0,-261
0,%))61
8
: *
8 '! <
'!
+!'! <
8 > + !!5
8 0,-261@
8 0,-261
"!-26
+
C
%57 2
FQD2N90TM
FQU2N90TU_WS
FQU2N90TU_AM002
())
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% )7
97
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-2
2)
)?
22B%2)
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Unit
*
'
'
'
*
=
'
=
*5
A
A
A56
6
6
Thermal Characteristics
Symbol
Parameter
FQD2N90TM
FQU2N90TU_WS
FQU2N90TU_AM002
RJC Thermal Resistance, Junction to Case, Max.
2.5
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
110
RJA
Thermal Resistance, Junction to Ambient (*1 in2 pad of 2 oz copper), Max.
50
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
1
FQD2N90 / FQU2N90 Rev. C2
www.fairchildsemi.com
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