FQB9N50CFS Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQB9N50CFS Datasheet PDF : 8 Pages
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FQB9N50CF
500V N-Channel MOSFET
Features
• 9A, 500V, RDS(on) = 0.85 Ω @VGS = 10 V
• Low gate charge ( typical 28nC)
• Low Crss ( typical 24pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
October 2006
FRFET TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, electronic lamp ballasts
based on half bridge topology.
D
D
GS
D2-PAK
FQB Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
©2006 Fairchild Semiconductor Corporation
1
FQB9N50CF Rev. A
G
S
FQB9N50CF
500
9
5.7
36
± 30
300
5
9.6
4.5
173
1.38
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQB9N50CF
0.72
40
62.5
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com
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