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FOD814S(2011) Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
FOD814S
(Rev.:2011)
Fairchild
Fairchild Semiconductor Fairchild
FOD814S Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical Characteristics (TA = 25°C Unless otherwise specified.) (Continued)
Isolation Characteristics
Symbol
Characteristic
VISO Input-Output Isolation
Voltage(3)
RISO Isolation Resistance
CISO Isolation Capacitance
*Typical values at TA = 25°C
Device Test Conditions
FOD814,
FOD817
FOD814,
FOD817
f = 60Hz, t = 1 min,
II-O 2µA
VI-O = 500VDC
FOD814, VI-O = 0, f = 1 MHz
FOD817
Min.
5000
5x1010
Notes:
1. Current Transfer Ratio (CTR) = IC/IF x 100%.
2. For test circuit setup and waveforms, refer to page 7.
3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
Typ.*
1x1011
0.6
Max. Units
Vac(rms)
1.0
pf
©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.5
4
www.fairchildsemi.com

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