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FMMT493

100V NPN MEDIUM POWER TRANSISTOR IN SOT23

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

FMMT493

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage

BVCBO

120

—

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

100

—

Emitter-Base Breakdown Voltage

BVEBO

7

—

Collector Cutoff Current

ICBO

—

—

Emitter Cutoff Current

Collector Emitter Cutoff Current

IEBO

—

—

ICES

—

—

100

—

Static Forward Current Transfer Ratio (Note 9)

hFE

100

60

—

—

20

—

Collector-Emitter Saturation Voltage (Note 9)

VCE(sat)

—

—

Base-Emitter Turn-On Voltage(Note 9)

Base-Emitter Saturation Voltage(Note 9)

Output Capacitance

VBE(on)

—

—

VBE(sat)

—

—

Cobo

—

—

Transition Frequency

fT

150

—

Note:

9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max

—

—

—

100

50

100

—

300

—

—

300

600

1.0

1.15

10

—

Unit

V

V

V

nA

nA

nA

—

mV

mV

V

V

pF

MHz

Test Condition

IC = 100µA

IC = 1mA

IE = 100µA

VCB = 100V

VEB = 5.6V

VCE = 100V

IC = 1mA, VCE = 10V

IC = 250mA, VCE = 10V

IC = 500mA, VCE = 10V

IC = 1A, VCE = 10V

IC = 500mA, IB = 50mA

IC = 1A, IB = 100mA

IC = 1A, VCE = 10V

IC = 1A, IB = 100mA

VCB = 10V, f = 1MHz

VCE = 10V, IC = 50mA,

f = 100MHz

FMMT493

Document number: DS33093 Rev. 4 - 2

4 of 7

www.diodes.com

April 2013

© Diodes Incorporated

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