FM600TU-3A Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC

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производитель

FM600TU-3A

MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE

MITSUBISHI ELECTRIC  

MITSUBISHI <MOSFET MODULE>

FM600TU-3A

HIGH POWER SWITCHING USE

INSULATED PACKAGE

ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)

Symbol

VDSS

VGSS

ID(rms)

IDM

IDA

IS(rms)*1

ISM*1

PD*4

PD*4

Tch

Tstg

Viso

Item

Drain-source voltage

Gate-source voltage

Drain current

Avalanche current

Source current

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

G-S Short

D-S Short

TC’ = 114°C*3

Pulse*2

L = 10µH Pulse*2

Conditions

Pulse*2

TC = 25°C

TC’ = 25°C*3

Terminals to base plate, f = 60Hz, AC 1 minute

Main terminals M6 screw

Mounting M6 screw

Typical value

Ratings

150

±20

300

600

300

300

600

960

1300

–40 ~ +150

–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5

600

Unit

V

V

Arms

A

A

Arms

A

W

W

°C

°C

Vrms

N•m

N•m

g

ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)

Symbol

Item

Conditions

Min.

IDSS

Drain cutoff current

VDS = VDSS, VGS = 0V

—

VGS(th) Gate-source threshold voltage ID = 30mA, VDS = 10V

4.7

IGSS

Gate leakage current

VGS = VGSS, VDS = 0V

—

rDS(ON) Static drain-source

ID = 300A

Tch = 25°C

—

(chip)

On-state resistance

VGS = 15V

Tch = 125°C

—

VDS(ON) Static drain-source

ID = 300A

Tch = 25°C

—

(chip)

On-state voltage

VGS = 15V

Tch = 125°C

—

R(lead)

Lead resistance

ID = 300A

terminal-chip

Tch = 25°C

—

Tch = 125°C

—

Ciss

Input capacitance

VDS = 10V

—

Coss

Output capacitance

—

VGS = 0V

Crss

Reverse transfer capacitance

—

QG

Total gate charge

VDD = 80V, ID = 300A, VGS = 15V

—

td(on)

Turn-on delay time

—

tr

Turn-on rise time

VDD = 80V, ID = 300A, VGS ± 15V

—

td(off)

Turn-off delay time

RG = 4.2Ω, Inductive load

—

tf

Turn-off fall time

—

trr*1

Reverse recovery time

IS = 300A

—

Qrr*1

Reverse recovery charge

—

VSD*1

Source-drain voltage

IS = 300A, VGS = 0V

—

Rth(ch-c)

MOSFET part (1/6 module)*7

—

Thermal resistance

Rth(ch-c’)

MOSFET part (1/6 module)*3

—

Rth(c-f)

Case to heat sink, Thermal grease Applied*8 (1/6 module) —

Rth(c’-f’)

Contact thermal resistance

Case to heat sink, Thermal grease Applied*3, *8 (1/6 module)

—

Limits

Typ.

Max. Unit

—

1

mA

6

7.3

V

—

1.5

µA

1.6

2.2

mΩ

3.0

—

0.48

0.66

V

0.91

—

0.7

—

mΩ

1.0

—

—

110

—

15

nF

—

10

1950

—

nC

—

400

—

400

ns

—

500

—

400

—

200

ns

8.0

—

µC

—

1.3

V

—

0.13

—

0.096

K/W

0.1

—

0.09

—

NTC THERMISTOR PART

Symbol

RTh*6

B*6

Parameter

Resistance

B Constant

Conditions

TTh = 25°C*5

Resistance at TTh = 25°C, 50°C*5

Limits

Min.

Typ.

—

100

—

4000

*1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).

*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.

*3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.

*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.

*5: TTh is thermistor temperature.

*6: B = In( R25 )/( 1

1)

R50 T25 T50

R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K]

R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K]

*7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.

*8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Unit

Max.

—

kΩ

—

K

Feb. 2009

2

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