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FLC10-200B Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
FLC10-200B
ST-Microelectronics
STMicroelectronics ST-Microelectronics
FLC10-200B Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
FLC10
Characteristics
mains is minimum.
The next curve on the next page shows the behavior with RS = 15 k and C = 1 µF.
Figure 7. Voltage across the capacitance with Rs = Rs 15 k, C = 1 µF and VBO = 225 V
Peak current limit
This component is designed to withstand ITRM = 190 A for a pulse duration of 10 µs for an
ambient temperature of 120° C in repetitive surge. The curve of peak current versus the
pulse duration allows us to verify if the application is within the FLC operating limit.
Figure 8. Peak current limit versus pulse duration
ITRM(A)
250
Tj max=120°C
200
150
100
50
5.0
7.5
10.0
12.5
15.0
tp (µs)
Power losses (for 10 µs, see Figure 3)
To evaluate the power losses, please use the following equations:
– For the thyristor: P = 1.18 x IT(AV) + 0.035 I2T(RMS)
– For the diode: P = 0.67 x IF(AV) + 0.106 I2F(RMS)
DocID5202 Rev 8
5/11

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