FGPF50N30T Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FGPF50N30T Datasheet PDF : 7 Pages
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Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
1000
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
100
tr
td(on)
10
10
20
30
40
50
Collector Current, IC [A]
Figure 15. Switching Loss vs. Gate Resistance
2000
Common Emitter
VCC = 200V, VGE = 15V
1000 IC = 30A
TC = 25oC
TC = 125oC
Eoff
Figure 14. Turn-off Characteristics vs.
Collector Current
500
Common Emitter
VGE = 15V, RG = 15Ω
TC = 25oC
TC = 125oC
tf
td(off)
100
10
20
30
40
50
Collector Current, IC [A]
Figure 16. Switching Loss vs.Gate Resistance
3000
Common Emitter
VGE = 15V, RG = 15Ω
1000
TC = 25oC
TC = 125oC
Eoff
Eon
Eon
100
100
0
20
40
60
80
100
Gate Resistance, RG [Ω]
Figure 17.Transient Thermal Impedance of IGBT
30
10
20
30
40
50
Collector Current, IC [A]
10
1 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
FGPF50N30T Rev. A
5
www.fairchildsemi.com
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