FGPF70N30TU Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FGPF70N30TU Datasheet PDF : 7 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
Com mon Em itter
5000
TC = 125oC
Cies
16
1000
12
Coes
Cres
8
100
4
70A
40A
IC = 20A
00
4
8
12
16
20
Gate-Em itter Voltage, VGE [V]
Figure 9. Gate Charge Characteristics
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
10
0
5
10
15
20
25
30
Collector-Emitter Voltage, VCE [V]
Figure 10. SOA Characteristics
15
Com m on Em itter
RL = 5Ω
12 TC = 25OC
VCC=100V
9
VCC = 200V
6
3
0
0
20
40
60
80
Gate Charge, Qg [nC]
Figure 11. Turn-On Characteristics vs.
Gate Resistance
200
100
10
1
50us
100us
1ms
DC Operation
Single Nonrepetitive
0.1 Pulse Tc=25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn Off Characteristics vs.
Gate Resistance
1000
Com m on Em itter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25OC
TC = 125OC
100
tr
td(on)
10
0
20
40
60
80
G ate R esistance, R G [Ω ]
100
2000
1000
tf
tf
100
td(off)
10
0
Common Emitter
VCC = 200V, VGE = 15V
IC = 40A
TC = 25OC
TC = 125OC
20
40
60
80
100
Gate Resistance, RG [Ω ]
4
www.fairchildsemi.com
FGPF70N30 Rev. A
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