FGPF7N60LSD Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FGPF7N60LSD Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
1000
800
600
400
200
0
1
Ciss
Common Emitter
V = 0V, f = 1MHz
GE
T = 25oC
C
Coss
Crss
10
Collector-Emitter Voltage, V [V]
CE
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 8. Turn-On Characteristics vs. Gate
Resistance
td(on)
100
tr
Common Emitter
V = 300V, V = +/-15V
CC
GE
I = 7A
C
T = 25oC
C
T = 125oC
C
10
100
1000
Gate Resistance, R [Ω ]
G
Figure 10. Switching Loss vs. Gate Resistance
1000
tf
td(off)
Common Emitter
100
V = 300V, V = +/-15V
CC
GE
I = 7A
C
T = 25oC
C
T = 125oC
C
100
1000
Gate Resistance, R [Ω ]
G
Figure 11. Turn-On Characteristics vs.
Collector Current
1000
Eoff
Eon
100
Common Emitter
V =300V,V =+/-15V
CC
GE
I =7A
C
T =25oC
C
T =125oC
C
100
1000
Gate Resistance, R [Ω]
G
Figure 12. Turn-Off Characteristics vs.
Collector Current
td(on)
tr
100
Common Emitter
V = +/-15V, R = 470Ω
GE
G
T = 25oC
C
T = 125oC
C
4
6
8
10
12
14
16
Collector Current, I [A]
C
1000
tf
100
4
td(off)
Common Emitter
V = +/-15V, R = 470Ω
GE
G
T = 25oC
C
T = 125oC
C
6
8
10
12
14
16
Collector Current, I [A]
C
5
FGPF7N60LSD Rev. A
www.fairchildsemi.com
Share Link: 