FGPF7N60LSDTU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGPF7N60LSDTU Datasheet PDF : 9 Pages
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January 2006
FGPF7N60LSD
600V, 7A Low Saturation IGBT CO-PAK
Features
• Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Applications
Lamp applications (Hallogen Dimmer)
Description
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provides
very low conduction and switching losses.The device is
designed for Lamp applications where very low On-Voltage
Drop is a required feature.
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
Description
VCES
VGES
IC
ICM (1)
IF
I FM
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
PD
Maximum Power Dissipation
@ TC = 25°C
Maximum Power Dissipation
@ TC = 100°C
TJ
Operating Junction Temperature
Tstg
Storage Temperature Range
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
RθJC (IGBT) Thermal Resistance, Junction-to-Case
RθJC(DIODE)
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
FGPF7N60LSD
600
± 20
14
7
21
12
60
45
18
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
2.8
4.5
62.5
©2006 Fairchild Semiconductor Corporation
1
FGPF7N60LSD Rev. A
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
www.fairchildsemi.com
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