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FGL40N120AND Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
FGL40N120AND
Fairchild
Fairchild Semiconductor Fairchild
FGL40N120AND Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V = ±15V, R = 5
GE
G
10
T = 25°C
C
Eon
T = 125°C
C
Eoff
1
0.1
20
30
40
50
60
70
80
Collector Current, I [A]
C
Figure 15. SOA Characteristics
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R = 15
L
T = 25°C
C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
100 Ic MAX (Continuous)
50µs
100
100µs
10
1ms
DC Operation
1
10
Single Nonrepetitive
0.1 Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Figure 17. Forward Characteristics
100
T = 125°C
J
10
T = 25°C
J
1
T = 125°C
C
T = 25°C
C
0.1
0
1
2
3
4
5
6
Forward Current , I [A]
F
Safe Operating Area
V = 15V, T = 125°C
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 18. Reverse Recovery Current
10
8
di/dt = 200A/µs
6
4
di/dt = 100A/µs
2
0
0
10
20
30
40
50
60
70
Forward Current , I [A]
F
6
FGL40N120AND Rev. A
www.fairchildsemi.com

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