FGL40N120AN Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGL40N120AN Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V = ±15V, R = 5Ω
GE
G
10
T = 25°C
C
Eon
T = 125°C
C
Eoff
1
0.1
20
30
40
50
60
70
80
Collector Current, I [A]
C
Figure 15. SOA Characteristics
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R = 15Ω
L
T = 25°C
C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
100 Ic MAX (Continuous)
50µs
100µs
100
10
1ms
DC Operation
1
10
Single Nonrepetitive
0.1 Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Safe Operating Area
V = 15V, T = 125oC
GE
C
1
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 17. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.01
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
PPddmm
tt11
tt22
DDuuttyyffaaccttoorrDD==tt11//tt22
PPeeaakkTTjj==PPddmm××ZZtthhjcjc++TTCC
1
10
5
FGL40N120AN Rev. A1
www.fairchildsemi.com
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