FFM105L Просмотр технического описания (PDF) - Willas Electronic Corp.
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производитель
FFM105L Datasheet PDF : 4 Pages
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WILLAS
1.0A SUFRACE MOUNT FAST RECOVERY RECTIFIERS-50-1000V
1.0A SURFACE MOUNT SCHOTTKY BARRIER SROEDC-TS1I2FM3IEA+R-LSPS-A2PC0VAK-AC2GK0E0AVGE
FFFFFPFMMTMbMH11F1TRr010e2He1U270RPL0L0rU-o-MdMu+c+t
Features
Rating and characteristic Pcuarcvkeasge outline
• Batch pFrIoGc.1e-sTsYdPeICsiAgLn,FeOxRcWelAleRnDt power dissipation offers
better reverse leakage current and thermal resistance.
•
Low
profile
CHARACTERISTICS
surface mounted application
in
order
to
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
SOD-123H
optimize board space.
1.2
• Lo5w0power loss, high efficiency.
• High current capability, low forward voltage drop.
1.0
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High surge capability.
• Gu1a0rdring for overvoltage protection.
• Ultra high-speed switching.
• Si3li.c0on epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Ro1H.0S product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.8
0.6
0.4
0.2
0
0
P.C.B. Mounted on
0.2" x 0.2" (5 mm x 5 mm)
Copper Pad Areas
0.071(1.8)
0.056(1.4)
20 40
60 80 100 120 140 160 180 200
Mechanical data
TJ=25 C
Pulse Width 300us
• Epoxy : UL94-V0 rated flame re1%taDrudtyaCynclte
0.1
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
LEAD TEMPERATURE (°C)
0.040(1.0)
0.024(0.6)
FIG0..403-1M(0A.8X) TIyMp. UM NON-REPETITIVE FORWA0R.03D1(0.8) Typ.
SURGE CURRENT
Method 2026
50
• Po.0la1rity : Indicated by cathode band
•
.6
Mounting
.8 1.0
Position :
1.2
Any
1.4
1.6
1.8
2.0
40
FORWARD VOLTAGE,(V)
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RECOVERY TIME CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
20
50Ω
10Ω
Single phaNsOeNINhDaUlCf TwIVaEve, 60HNzON, IrNeDsUiCsTtIiVvEe of inductive load.
TJ=25 C
8.3ms Single Half
Sine Wave
JEDEC method
For capacitive load, derate current by 20%
10
(+)
RATINGS
Marking Code2(a5pVpdrocx.)
D.U.T.
Maximum Re(c)urrent Peak Reverse Voltage
1Ω
Maximum RMS Voltage NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
Maximum DC Blocking Voltage
SYMB(O)L FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
PULSE
GENERATOR
12
V(NRORTEM2)
20
(+)
VRMS
14
130
14
1
30
40
21
28
15
16
18
5
10
50
60
80
10
115 120
50
100
100
150
200
35 NUMBE4R2OF CYCLE5S6AT60Hz 70
105
140
Volts
Volts
VDC
20
30
40
50
60
80
100
150
200 Volts
Maximum ANvOeTrEaSg: 1e. RFisoerTwimaer=d7nRs meacxt.i,fIinepdut CImuperdraenncet= 1 megohm.22pF. IO
FIG.5-TYPICAL JUN1C.0TION CAPACITANCE
Amps
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
35
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
superimposed on rated load (JEDEC method)
30
Amps
Typical Thermal Resistance (Note t2rr)
Typical Junction Capacitance (Note 1)
+0.5A
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Operating Temperature Range
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Storage Temperature Range
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0
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-C0.H25AA RACTERISTICS
Maximum Forward Voltage at 1.0A DC
RΘJA
CJ
TJ
TSTG
25
-55 to +125
20
15
40
120
- 65 to +175
-55 to +150
℃/W
PF
℃
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
VF
10 0.50
0.70
0.85
0.9
0.92 Volts
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
-1.0A
NOTES:
1cm
1- Measured at 1 MHZ and applied reverse vSEoTltaTIgMeE BoAf S4E.0FOVRDC.
50 / 10ns / cm
2- Thermal Resistance From Junction to Ambient
5
0
.01
.05 .1
0.5
10
.5 1
5 10
50 100
REVERSE VOLTAGE,(V)
mAmps
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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