PTB20187 Просмотр технического описания (PDF) - Ericsson
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PTB20187 Datasheet PDF : 2 Pages
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PTB 20187
4 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20187 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.80 to 2.00 GHz. Rated at 4
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
Typical Output Power vs. Input Power
6
4 Watts, 1.80–2.00 GHz
Class AB Characteristics
30% Collector Efficiency at 4 Watts
Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
5
4
VCC = 26 V
3
ICQ = 50 mA
f = 1.8-2.0 GHz
2
0.0
0.2
0.4
0.6
0.8
Input Power (Watts)
20187 LOT CODE
Package 20227
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCES
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
1.0
19.7
0.112
–40 to +150
8.9
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
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