FDS8962C Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS8962C Datasheet PDF : 8 Pages
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Typical Characteristics: Q2 (P-Channel)
30
VGS = -10V
-6.0V
-5.0V
20
-4.5V
-4.0V
10
-3.5V
-3.0V
0
0
1
2
3
4
5
6
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
2
1.8
VGS=-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
6
12
18
24
30
-ID, DRAIN CURRENT (A)
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = -5A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. On-Resistance Variation with
Temperature.
0.25
0.2
ID = -2.5A
0.15
0.1
0.05
TA = 25°C
TA = 125°C
0
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
15
VDS = -5V
12
9
TA = -55oC
25oC
125oC
6
3
0
1
1.5
2
2.5
3
3.5
4
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 15. Transfer Characteristics.
100
10
1
0.1
0.01
VGS =0V
TA = 125 oC
25o C
-55o C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS8962C Rev. A1
6
www.fairchildsemi.com
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