FDS9958 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS9958 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
ID = -2.9A
8
VDD = -20V
6
VDD = -30V
4
VDD = -40V
2
0
0
5
10
15
20
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
2000
1000
Ciss
100
Coss
Crss
f = 1MHz
VGS = 0V
10
0.1
1
10
60
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
4
3
2
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
3.0
2.5
2.0
VGS = -4.5V
1.5
VGS = -10V
1.0
RθJA = 78oC/W
0.5
0.0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
20
10
0.1ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 135oC/W
TA = 25oC
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1ms
10ms
100ms
1s
10s
DC
100 200
200
100
VGS = -10V
10
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1
0.5
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
©2007 Fairchild Semiconductor Corporation
4
FDS9958 Rev.C
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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