FDS9412A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS9412A Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25°C unless otherwise noted
10
VDD = 15V
8
6
4
ID = 8A
2
ID = 1A
0
0
4
8
12
Qg, GATE CHARGE(nC)
1200
1000
Ciss
800
600
400
Crss
Coss
200 f = 1MHz
VGS = 0V
10
16
0.1
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage
10
TJ = 25oC
TJ = 125oC
10
8
VGS = 10V
6
VGS = 4.5V
4
2
RθJA = 50oC/W
1
10-2
10-1
100
101
102
tAV, TIME IN AVALANCHE(ms)
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current
vs Ambient Temperature
100
10
100µs
1
1ms
10ms
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(ON)
0.01
0.1
1
SINGLE PULSE
TJ=MAX RATED
TA=25oC
10
1s
10s
DC
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
10000
1000
VGS = 10V
100
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0-----–-----T---A---
125
10
SINGLE PULSE
1
10-5 10-4 10-3 10-2 10-1 100 101 102 103
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
FDS9412A Rev. A1
4
www.fairchildsemi.com
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