FDS9412A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS9412A Datasheet PDF : 6 Pages
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February 2006
FDS9412A
N-Channel PowerTrench® MOSFET
30V, 8A, 21mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switiching PWM
controllers. It has been optimized for low gate charge ,low
rDS(on) and fast switching speed.
Max rDS(on) = 21mΩ at VGS = 10V, ID = 8A
Max rDS(on) = 25mΩ at VGS = 4.5V, ID = 6.6A
Low gate charge
RoHS Compliant
Application
DC/DC converters
D
D
D
D
SO-8
G
SS
S
5
4
6
3
7
2
8
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (TA = 25°C, VGS = 10V, RθJA = 50°C/W )
-Continuous (TA = 25°C, VGS = 4.5V, RθJA = 50°C/W )
-Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power dissipation
Operating and Storage Temperature
(Note 3)
Thermal Characteristics
RθJC
RθJA
Thermal Resistance , Junction to Case
Thermal Resistance , Junction to Ambient
(Note 1)
(Note 1a)
Package Marking and Ordering Information
Device Marking
FDS9412A
Device
FDS9412A
Package
SO-8
Reel Size
330mm
Ratings
30
±20
8
6.6
30
54
2.5
-55 to 150
25
50
Tape Width
12mm
Units
V
V
A
A
mJ
W
°C
°C/W
°C/W
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDS9412A Rev. A1
www.fairchildsemi.com
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