FDS9400 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS9400 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = -1A
8
6
VDS = -5V
-10V
-15V
4
2
0
0
1
2
3
4
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
VGS = -10V
SINGLE PULSE
0.1
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
300
250
CISS
f = 1 MHz
VGS = 0 V
200
150
COSS
100
50
CRSS
0
0
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS9400A Rev B1(W)
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