FDPF5N50FT Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDPF5N50FT Datasheet PDF : 10 Pages
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FDP5N50F / FDPF5N50FT
N-Channel MOSFET, FRFET
500V, 4.5A, 1.55Ω
Features
• RDS(on) = 1.25Ω ( Typ.)@ VGS = 10V, ID = 2.25A
• Low gate charge ( Typ. 11nC)
• Low Crss ( Typ. 5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
May 2012
UniFET TM
tm
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power factor-
correction.
D
G
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP5N50F FDPF5N50FT
500
±30
4.5
4.5*
2.7
2.7*
18
18*
233
4.5
8.5
4.5
85
28
0.67
0.22
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
FDP5N50F
1.4
0.5
62.5
FDPF5N50FT
4.5
-
62.5
Units
oC/W
©2012 Fairchild Semiconductor Corporation
1
FDP5N50F / FDPF5N50FT Rev. C1
www.fairchildsemi.com
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