FDS6930B Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6930B Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 5.5A
8
6
4
VDS = 5V
15V
10V
2
0
0
1
2
3
4
5
6
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
100µs
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10.0V
0.1 SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
500
f = 1 MHz
VGS = 0 V
400
300
Ciss
200
Coss
100
Crss
0
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40
RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * RθJA
RθJA = 135°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6930B Rev. A1
4
www.fairchildsemi.com
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