FDS6930B Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6930B Datasheet PDF : 5 Pages
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March 2010
FDS6930B
Dual N-Channel Logic Level PowerTrench® MOSFET
Features
■ 5.5 A, 30 V. RDS(ON) = 38 mΩ @ VGS = 10 V
RDS(ON) = 50 mΩ @ VGS = 4.5 V
■ Fast switching speed
■ Low gate charge
■ High performance trench technology for extremely
low RDS(ON)
■ High power and current handling capability
General Description
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on-state resistance
and yet maintain superior switching performance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss and fast switch-
ing are required.
D2
D2
D1
D1
SO-8
Pin 1
G2
S2
G1
S1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Ratings
30
± 20
5.5
20
2
1.6
1
0.9
–55 to 150
78
40
Package Marking and Ordering Information
Device Marking
FDS6930B
Device
FDS6930B
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
1
FDS6930B Rev. A1
www.fairchildsemi.com
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