FDS6990AS Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6990AS Datasheet PDF : 8 Pages
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Typical Characteristics
10
ID =7.5A
8
6
4
VDS = 10V
20V
15V
2
0
0
2
4
6
8
10
12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135 oC/W
TA = 25oC
100 µs
1ms
10ms
100s
1s
10s
DC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1500
1200
f = 1MHz
VGS = 0V
900
Ciss
600
300
Crss
Coss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R θJA = 135°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * Rθ JA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ – TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1000
5
FDS6990AS Rev. A1
www.fairchildsemi.com
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