FDS6986AS Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6986AS Datasheet PDF : 10 Pages
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Typical Characteristics Q1
10
ID = 6.5A
8
6
4
VDS = 10V
20V
15V
2
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
100µs
10
RDS(ON) LIMIT
1
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19. Maximum Safe Operating Area.
1000
800
600
f = 1MHz
VGS = 0 V
Ciss
400
Coss
200
Crss
0
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 18. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6986AS Rev A (X)
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