FDS6986AS Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6986AS Datasheet PDF : 10 Pages
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Typical Characteristics: Q2
10
ID = 7.9A
8
6
VDS = 10V
20V
15V
4
2
0
0
3
6
9
12
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
10
RDS(ON) LIMIT
1
100µs
1ms
10ms
100ms
1s
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
800
f = 1MHz
VGS = 0 V
600
Ciss
400
Coss
200
Crss
0
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 135°C/W
40
TA = 25°C
30
20
10
0
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
FDS6986AS Rev A (X)
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