FDS6986AS Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6986AS Datasheet PDF : 10 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS
Gate-Body Leakage
VGS = 0 V, ID = 1 mA
Q2 30
V
VGS = 0 V, ID = 250 uA
Q1 30
ID = 1 mA, Referenced to 25°C
Q2
ID = 250 µA, Referenced to 25°C Q1
31
mV/°C
23
VDS = 24 V, VGS = 0 V
Q2
Q1
500 µA
1
VGS = ±20 V, VDS = 0 V
Q2
VGS = ±16 V, VDS = 0 V
Q1
±100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
Q2 1 1.7 3
V
Q1 1 1.9 3
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 1 mA, Referenced to 25°C
Q2
ID = 250 uA, Referenced to 25°C
Q1
–3.2
mV/°C
–4.0
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.9 A
Q2
VGS = 10 V, ID = 7.9 A, TJ = 125°C
VGS = 4.5 V, ID = 7 A
17 20 mΩ
25 32
22 28
VGS = 10 V, ID = 6.5 A
Q1
VGS = 10 V, ID = 6.5 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
21 29
32 49
32 38
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 5 V
Q2 30
A
Q1 20
gFS
Forward Transconductance VDS = 5 V, ID = 7.9 A
VDS = 5 V, ID = 6.5 A
Q2
25
S
Q1
15
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VGS = 15mV, f = 1.0 MHz
Q2
550
pF
Q1
720
Q2
180
pF
Q1
120
Q2
70
pF
Q1
60
Q2
3.2
Ω
Q1
1.2
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
VDD = 15 V, ID = 1 A,
td(off)
Turn-Off Delay Time
VGS = 10V, RGEN = 6 Ω
tf
Turn-Off Fall Time
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
VDD = 15 V, ID = 1 A,
td(off)
Turn-Off Delay Time
VGS = 4.5V, RGEN = 6 Ω
tf
Turn-Off Fall Time
Q2
9 18 ns
Q1
10 19
Q2
6 12 ns
Q1
4
8
Q2
25 40 ns
Q1
24 39
Q2
4
8
ns
Q1
3
6
Q2
11 20 ns
Q1
10 20
Q2
15 26 ns
Q1
9 18
Q2
15 26 ns
Q1
13 23
Q2
6 12 ns
Q1
3
6
FDS6986AS Rev A (X)
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