FDS6982S Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6982S Datasheet PDF : 9 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
∆BVDSS
===∆TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSSF
Gate-Body Leakage, Forward
IGSSR
Gate-Body Leakage, Reverse
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
===∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 8.6 A
VGS = 10 V, ID = 8.6 A, TJ = 125°C
VGS = 4.5 V, ID = 7.5 A
VGS = 10 V, ID = 6.3 A
VGS = 10 V, ID = 6.3 A, TJ = 125°C
VGS = 4.5 V, ID = 5.6 A
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 5 V, ID = 8.6 A
VDS = 5 V, ID = 6.3 A
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
Crss
Reverse Transfer Capacitance
Type Min Typ Max Units
Q2 30
Q1 30
Q2
20
Q1
26
V
mV/°C
Q2
500 µA
Q1
1
All
100 nA
All
-100 nA
Q2 1
Q1 1
3
V
3
Q2
-3.5
mV/°C
Q1
-5
Q2
0.013 0.016 Ω
0.020 0.027
0.017 0.022
Q1
0.021 0.028
0.038 0.047
0.028 0.035
Q2 30
A
Q1 20
Q2
38
S
Q1
18
Q2
2040
pF
Q1
815
Q2
615
pF
Q1
186
Q2
216
pF
Q1
66
FDS6982S Rev C (W)
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