FDS6680AS Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDS6680AS Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
10
ID =11.5A
8
6
4
VDS = 10V
20V
15V
2
0
0
5
10
15
20
25
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100 RDS(ON) LIMIT
10
100µs
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10V
0.1 SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1800
1500
f = 1MHz
VGS = 0 V
1200
Ciss
900
600
Coss
300
Crss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
RθJA = 125°C/W
40
TA = 25°C
30
20
10
0
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680AS Rev B(X)
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