FDP150N10A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDP150N10A Datasheet PDF : 9 Pages
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FDP150N10A
N-Channel PowerTrench® MOSFET
100 V, 50 A, 15 mΩ
November 2013
Features
• RDS(on) = 12.5 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
• Fast Switching Speed
• Low Gate Charge, QG = 16.2 nC (Typ.)
• High Performance Trench Technology for Extremely Low
RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter
D
GDS
TO-220
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDP150N10A_F102
100
±20
50
36
200
84.6
6.0
91
0.61
-55 to +175
300
Unit
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDP150N10A_F102
1.6
62.5
Unit
oC/W
©2011 Fairchild Semiconductor Corporation
1
FDP150N10A Rev. C1
www.fairchildsemi.com
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