FDP150N10A(2011) Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDP150N10A Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
400
VGS = 15.0V
10.0V
8.0V
6.5V
100
6.0V
5.5V
5.0V
10
4
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
7
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
40
30
20
VGS = 10V
10
VGS = 20V
0
*Note: TC = 25oC
0
50
100
150
200
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3000
Ciss
1000
Coss
100
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
10 Coss = Cds + Cgd
Crss = Cgd
5
0.1
1
10
VDS, Drain-Source Voltage [V]
Crss
100
Figure 2. Transfer Characteristics
200
*Notes:
100 1. VDS = 10V
2. 250μs Pulse Test
175oC
25oC
-55oC
10
1
2
3
4
5
6
7
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
400
100
175oC
25oC
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
1
0.0
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 20V
8
VDS = 50V
VDS = 80V
6
4
2
*Note: ID = 50A
0
0
5
10
15
20
Qg, Total Gate Charge [nC]
FDP150N10A_F102 Rev. A1
3
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