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FDD5N50NZF Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
FDD5N50NZF
Fairchild
Fairchild Semiconductor Fairchild
FDD5N50NZF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Package Marking and Ordering Information
Device Marking
FDD5N50NZF
Device
FDD5N50NZFTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250μA, VGS = 0V, TC = 25oC
500
ID = 250μA, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, VGS = 0V,TC = 125oC
-
VGS = ±25V, VDS = 0V
-
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250μA
VGS = 10V, ID = 1.85A
VDS = 20V, ID = 1.85A
3.0
-
(Note 4)
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V ID = 3.7A
VGS = 10V
-
-
-
-
-
(Note 4, 5)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
VDD = 250V, ID = 3.7A
-
VGS = 10V, RGEN = 25Ω
-
(Note 4, 5)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 3.7A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 3.7A
dIF/dt = 100A/μs
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 23mH, IAS = 3.7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD 3.7A, di/dt 200A/μs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300μs, Dual Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
-
-
-
-
(Note 4)
-
Typ.
-
0.5
-
-
-
-
1.47
4.2
365
50
4
9
2
4
12
19
31
22
-
-
-
87
0.15
Quantity
2500
Max. Units
-
V
-
V/oC
10
μA
100
±10 μA
5.0
V
1.75
Ω
-
S
485 pF
65
pF
8
pF
12
nC
-
nC
-
nC
35
ns
50
ns
70
ns
55
ns
3.7
A
14
A
1.5
V
-
ns
-
μC
FDD5N50NZF Rev. C0
2
www.fairchildsemi.com

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