FDFS2P102 Просмотр технического описания (PDF) - Fairchild Semiconductor

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FDFS2P102

Integrated P-Channel MOSFET and Schottky Diode

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25 C unless otherwise noted

Test Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

IGSSF

IGSSR

Gate-Body Forward Leakage

Gate-Body Reverse Leakage

VGS = 0 V, ID = -250 µA

-20

VDS = - 16 V,

VGS = 0 V

TJ = 55°C

VGS = 20 V, VDS = 0 V

VGS = -20 V, VDS = 0 V

V

-1

µA

-10

100 nA

-100 nA

On Characteristics (Note 2)

VGS(th)

Gate Threshold Voltage

RDS(on)

Static Drain-Source On-Resistance

ID(on)

On-State Drain Current

gFS

Forward Transconductance

VDS = VGS, ID = -250 µA

VGS = -10 V, ID = -3.3 A

VGS = -4.5 V, ID = -2.5 A

VGS = -10 V, VDS = -5 V

VDS = -10 V, ID = -3.3 A

-1 -1.4 -2

V

0.100 0.125 Ω

0.167 0.2

-10

A

5

S

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = -10 V, VGS = 0 V,

f = 1.0 MHz

270

pF

150

pF

45

pF

Switching Characteristics

td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

(Note 2)

VDD = -15 V, ID = -1 A,

VGS = -10 V, RGEN = 6 Ω

VDS = -5 V, ID = -3.3 A,

VGS = -10 V,

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2)

8

16

ns

7

14

ns

17 27

ns

10 1.8

ns

7

10

nC

-1.3

A

-0.8 -1.2

V

Schottky Diode Characteristics

IR

Reverse Leakage

VF

Forward Voltage

VR = 20 V

IF = 1 A

IF = 2 A

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

TJ = 25°C

TJ = 125°C

250 uA

18 mA

0.47 V

0.39

0.58

0.53

Thermal Characteristics

R JA

Thermal Resistance, Junction-to-Ambient

R JC

Thermal Resistance, Junction-to-Case

(Note 1a)

78

(Note 1)

40

Notes:

1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface

of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 50° C/W when

mounted on a 1 in2

pad of 2 oz. copper.

b) 105° C/W when

mounted on a 0.04 in2

pad of 2 oz. copper.

c) 125° C/W when

mounted on a minimum

pad.

Scale 1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDFS2P102 Rev. E

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