FDD6690 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDD6690 Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
10
ID = 12A
8
VDS = 5V
10V
15V
6
4
2
0
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
2500
2000
1500
1000
500
0
0
CISS
f = 1MHz
VGS = 0 V
COSS
CRSS
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
RDS(ON) LIMIT
10
1
100µs
1ms
10ms
100ms
1S
10S
DC
VGS = 10V
0.1
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
60
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
40
20
0
0.01
0.1
1
10
100
SINGLE PULSE TIME (SEC)
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
0.001
D = 0.5
0.2
0.1
0.05
0.01
0.02
Single Pulse
0.0001
0.0001
0.001
0.01
0.1
1
t1 , TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA = 96°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t1 / t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDD6690A, Rev. B2
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