BA481 Просмотр технического описания (PDF) - Philips Electronics

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производитель

BA481

UHF mixer diode

Philips Electronics 

Philips Semiconductors

UHF mixer diode

Product specification

BA481

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

rs

series resistance

F

noise figure

Cd

diode capacitance

CONDITIONS

MAX.

see Fig.2

IF = 1 mA

450

IF = 10 mA

600

VR = 4 V; see Fig.3

10

VR = 4 V; Tamb = 60 °C; see Fig.3 100

f = 1 kHz; IF = 5 mA

13

f = 900 MHz; note 1

8

f = 1 MHz; VR = 0 V; see Fig.4 1.1

Note

1. The local oscillator is adjusted for a diode current of 2 mA.

IF amplifier noise Fif = 1.5 dB; f = 35 MHz.

UNIT

mV

mV

µA

µA

Ω

dB

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient

Note

1. Refer to SOD68 standard mounting conditions.

CONDITIONS

note 1

VALUE

320

UNIT

KW

1996 Mar 19

3

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