MT4LC4M16R6TG-6S Просмотр технического описания (PDF) - Micron Technology
Номер в каталоге
Компоненты Описание
производитель
MT4LC4M16R6TG-6S Datasheet PDF : 24 Pages
| |||
V IH
RAS# VIL
CAS# VIH
V IL
V IH
ADDR VIL
WE# VIH
V IL
DQ
V OH
V OL
V IH
OE# VIL
READ CYCLE
tRC
tRAS
4 MEG x 16
EDO DRAM
tRP
tCRP
tRCD
tCSH
tRSH
tCAS
tRRH
tASR
tRAD
tRAH
ROW
tAR
tASC
tACH
tCAH
tRCS
COLUMN
tRCH
ROW
OPEN
tAA
tRAC
tCAC
tCLZ
tOE
NOTE 1
tOFF
VALID DATA
tOD
OPEN
DON’T CARE
UNDEFINED
TIMING PARAMETERS
SYMBOL
tAA
tACH
tAR
tASC
tASR
tCAC
tCAH
tCAS
tCLCH
tCLZ
tCRP
tCSH
tOD
MIN
12
38
0
0
8
8
5
0
5
38
0
-5
MAX
25
13
10,000
12
MIN
15
45
0
0
10
10
5
0
5
45
0
-6
MAX
30
15
10,000
15
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SYMBOL
tOE
tOFF
tRAC
tRAD
tRAH
tRAS
tRC
tRCD
tRCH
tRCS
tRP
tRRH
tRSH
MIN
0
9
7
50
84
11
0
0
30
0
13
-5
MAX
12
12
50
10,000
MIN
0
12
10
60
104
14
0
0
40
0
15
-6
MAX
15
15
60
10,000
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTE: 1. tOFF is referenced from rising edge of RAS# or CAS#, whichever occurs last.
4 Meg x 16 EDO DRAM
D29_2.p65 – Rev. 5/00
13
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2000, Micron Technology, Inc.
Share Link: 