MT4LC4M16N3(2001) Просмотр технического описания (PDF) - Micron Technology

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производитель

MT4LC4M16N3
(Rev.:2001)

4 MEG x 16 EDO DRAM

Micron Technology 

4 MEG x 16

EDO DRAM

Icc OPERATING CONDITIONS AND MAXIMUM LIMITS

(Notes: 1, 2, 3, 5, 6; notes appear on page 11) (VCC = +3.3V ±0.3V)

PARAMETER/CONDITION

SYMBOL SPEED

STANDBY CURRENT: TTL

(RAS# = CAS# = VIH)

ICC1

ALL

STANDBY CURRENT: CMOS

(RAS# = CAS# ≥ VCC - 0.2V; DQs may be left open;

Other inputs: VIN ≥ VCC - 0.2V or VIN ≤ 0.2V)

ICC2

ALL

OPERATING CURRENT: Random READ/WRITE

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

ICC3

-5

-6

OPERATING CURRENT: EDO PAGE MODE

Average power supply current

(RAS# = VIL, CAS#, address cycling: tPC = tPC [MIN])

ICC4

-5

-6

REFRESH CURRENT: RAS#-ONLY

Average power supply current

(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])

ICC5

-5

-6

REFRESH CURRENT: CBR

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

ICC6

-5

-6

REFRESH CURRENT: Extended (“S” version only)

Average power supply current: CAS# = 0.2V or CBR cycling;

RAS# = tRAS (MIN); WE# = VCC - 0.2V; A0-A10, OE# and

DIN = VCC - 0.2V or 0.2V (DIN may be left open); tRC = 125µs

ICC7

ALL

REFRESH CURRENT: Self (“S” version only)

ICC8

ALL

Average power supply current: CBR with RAS# ≥ tRASS (MIN)

and CAS# held LOW; WE# = VCC - 0.2V; A0-A10, OE# and

DIN = VCC - 0.2V or 0.2V (DIN may be left open)

MAX

4K 8K

1

1

500 500

150 115

165 130

120 120

125 125

150 115

165 130

150 150

165 165

400 400

350 350

UNITS NOTES

mA

µA

mA 26

mA 26

mA 22

mA 4, 7,

23

µA 4, 7,

23, 37

µA 4, 7,

37

4 Meg x 16 EDO DRAM

D29_C.p65 – Rev. 2/01

8

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

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