■ Thermal Characteristics
Parameter
Thermal Resistance Junction-Ambient
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
ET840
Symbol
RthJA
RthCS
RthJC
Ratings
TO-220
TO-220F
62.5
0.5
--
0.90
2.75
Units
℃/W
■ Electrical Characteristics(TJ=25℃,unless Otherwise specified.)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Forward
Current
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Conditions
Min
BVDSS
VGS=0V,ID=250µA
500
IDSS
VDS=500V,VGS=0V
--
VDS=400V,TC=125℃
--
IGSS
VGS=30V,VDS=0V
--
VGS=-30V,VDS=0V
--
△BVDSS/△TJ
ID=250µA
--
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VSD
ISD
ISM
tRR
QRR
VDS=VGS, ID=250µA
2.0
VDS=10V,ID=4.5A
--
--
VDS=25V,VGS=0V,
f=1MHZ
--
--
--
VDD=250V,ID=9.0A,
--
RG=25Ω
(Note 4, 5)
--
--
VDS=400V, ID=9.0A ,
--
VGS=10V
--
(Note 4, 5)
--
VGS=0V,ISD=9.0A
--
--
--
ISD=9.0A,
--
dISD/dt=100A/µs
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS =9.0 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 9.0 A, di/dt ≤ 200A/μs, VDD≤BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤ 2%
5. Essentially independent of operating temperature
Typ
--
--
--
--
--
0.6
--
0.65
870
130
25
20
70
90
60
30
4.0
15
--
--
--
340
3.0
Max Units
--
V
1
µA
10
µA
100
nA
-100 nA
--
V/℃
4.0
V
0.80
Ω
--
pF
--
pF
--
pF
--
ns
--
ns
--
ns
--
ns
--
nC
--
nC
--
nC
1.4
V
9.0
A
36.0
A
--
ns
--
µC
2
BEIJING ESTEK ELECTRONICS CO.,LTD