ESDA14V2-4BF2(2008) Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание

производитель

ESDA14V2-4BF2
(Rev.:2008)

Quad bidirectional Transil™ array for ESD protection

STMicroelectronics 

Characteristics

1

Characteristics

ESDA14V2-4BF2

Table 1.

Symbol

Absolute ratings (limiting values)

Parameter

Value

Unit

VPP ESD discharge

MIL STD 883E - Method 3015-7

IEC61000-4-2 air discharge

IEC61000-4-2 contact discharge

PPP Peak pulse power (8/20 µs)

Tj Junction temperature

Tstg Storage temperature range

TL Lead solder temperature (10 seconds duration)

Top Operating temperature range

± 25

± 15

kV

±8

50

W

125

°C

-55 to +150 °C

260

°C

-40 to +125 °C

Table 2. Electrical characteristics (Tamb = 25 °C)

Symbol

Parameter

I

VRM

Stand-off voltage

VBR

Breakdown voltage

VCL

Clamping voltage

IRM

Leakage current @

VRM

IPP

Peak pulse current

C

Capacitance

VCL VBR VRM

V

Slope: 1 / Rd

IPP

Rd

Dynamic resistance

Types

VBR @ IR

min.

max.

V

V mA

ESDA6V1SC5

14.2

18 1

1. Square pulse, Ipp = 3 A, tp = 2.5 µs.

2. Δ VBR = αT* (Tamb -25 °C) * VBR (25 °C)

IRM @ VRM

max.

µA

V

1

12

0.1

3

Rd

αT

C

typ.(1)

Ω

max.(2) typ.

0 V bias

10-4/C pF

3.2

10

15

2/8

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