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EMIF08-1005M16(2008) Просмотр технического описания (PDF) - STMicroelectronics

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EMIF08-1005M16 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
EMIF08-1005M16
Characteristics
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VBR
IRM
VRM
VCL
Rd
IPP
RI/O
Cline
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input and Output
Input capacitance per line
Symbol
Test conditions
VBR
VF
IRM
RI/O
Cline
IR = 1 mA
IF = 10 mA
VRM = 3 V per line
Tolerance ± 10%
VLINE= 0 V dc, VOSC = 30 mV, F = 1 MHz
I
IF
VBR
VF
VCL
VRM
V
IRM
IR
IPP
Min. Typ. Max. Unit
6
8
10
V
0.5
1.0
1.5
V
200
nA
90
100 110
Ω
38
45
52
pF
Figure 3. S21 attenuation measurement
0.00
dB
- 10.00
Figure 4. Analog cross talk measurements
0.00
dB
- 30.00
- 20.00
- 60.00
- 30.00
- 90.00
- 40.00
1.0M
3.0M
10.0M 30.0M 100.0M 300.0M 1.0G
f/Hz
3.0G
- 120.00
1.0M
3.0M
10.0M 30.0M 100.0M 300.0M 1.0G
f/Hz
3.0G
3/10

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