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EMIF04-1005M8(2008) Просмотр технического описания (PDF) - STMicroelectronics

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EMIF04-1005M8 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
EMIF04-1005M8
Table 1.
Symbol
Absolute ratings (limiting values at Tamb = 25 °C unless otherwise specified)
Parameter
Value
Unit
VPP
ESD IEC 61000-4-2, air discharge
ESD IEC 61000-4-2, contact discharge
Tj
Junction temperature
Top Operating temperature range
Tstg Storage temperature range
15
15
kV
125
°C
-40 to + 85
°C
-55 to +150
°C
Table 2.
Symbol
Electrical characteristics (Tamb = 25 °C)
Parameter
VBR
IRM
VRM
VCL
Rd
IPP
RI/O
Cline
Breakdown voltage
Leakage current @ VRM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Series resistance between Input & Output
Input capacitance per line
Symbol
Test conditions
VBR
VF
IRM
RI/O
Cline
IR = 1 mA
IF = 10 mA
VRM = 3 V per line
Tolerance ± 10%
VLINE = 0 V dc, VOSC = 30 mV, F = 1 MHz
I
IF
VBR
VF
VCL
VRM
V
IRM
IR
IPP
Min.
6
0.5
Typ.
8
1.0
90
100
38
45
Max.
10
1.5
200
110
52
Unit
V
V
nA
Ω
pF
Figure 3. S21 attenuation measurement
dB
0.00
- 10.00
Figure 4. Analog cross talk measurements
dB
0.00
- 20.00
- 40.00
- 20.00
- 30.00
- 40.00
100.0k
F (Hz)
1.0M 10.0M 100.0M 1.0G
- 60.00
- 80.00
- 100.00
- 120.00
100.0k
1.0M
F (Hz)
10.0M 100.0M 1.0G
2/10

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