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EMIF09-SD01F3(2006) Просмотр технического описания (PDF) - STMicroelectronics

Номер в каталоге
Компоненты Описание
производитель
EMIF09-SD01F3
(Rev.:2006)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
EMIF09-SD01F3 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
1 Characteristics
1 Characteristics
Figure 1. Configuration
DAT3_PU
EMIF09-SD01F3
VSD
CLK
CMD
DATA0
DATA1
DATA2
DATA3
CD
WP
WP+CD
DAT3_PD
R21
R1
R2
R3
R4
R5
R6
R7
R8
R9
SDCLK
SDCMD
SDDATA0
SDDATA1
SDDATA2
SDDATA3
SDCD
SDWP
SDWP+CD
GND_H
GND_C
Table 1. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Internal pins (A1, B1, C1, D1, E1, A2, B2, C2, D2, E2, C3)
ESD discharge IEC 61000-4-2, air discharge
2
VPP
ESD discharge IEC 61000-4-2, contact discharge
External pins (A4, B4, C4, D4, E4, A5, B5, C5, D5, E5)
2
kV
ESD discharge IEC 61000-4-2, air discharge
15
ESD discharge IEC 61000-4-2, contact discharge
8
Tj
Junction temperature
125
°C
Top
Operating temperature range
-30 to + 85
°C
Tstg
Storage temperature range
-55 to 150
°C
GND bumps (GND_H and GND_C - A3, D3 and E3) must be connected to ground on the
printed circuit board for ESD testing and RF measurements.
2/8

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