EMH2407 Просмотр технического описания (PDF) - SANYO -> Panasonic

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Компоненты Описание

производитель

EMH2407

N-Channel Silicon MOSFETs

SANYO -> Panasonic 

EMH2407

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

RDS(on)3

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=20V, VGS=0V

VGS=±8V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=3A

ID=3A, VGS=4.5V

ID=3A, VGS=4V

ID=1.5A, VGS=2.5V

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=10V, VGS=4.5V, ID=6A

IS=6A, VGS=0V

Switching Time Test Circuit

VIN

4.5V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=10V

ID=3A

RL=3.33Ω

D

VOUT

Rg

EMH2407

P.G

50Ω

S

Rg=2kΩ

Ordering Information

Device

EMH2407-TL-H

Package

EMH8

Shipping

3,000pcs./reel

Ratings

Unit

min

typ

max

20

V

1

μA

±10

μA

0.5

1.3

V

3

5

S

13

19

25 mΩ

14

20

26 mΩ

16

28

39 mΩ

580

pF

95

pF

75

pF

310

ns

1020

ns

3000

ns

2250

ns

6.3

nC

0.83

nC

1.9

nC

0.78

1.2

V

memo

Pb Free and Halogen Free

No. A1141-2/7

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