EL5420T Просмотр технического описания (PDF) - Intersil
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EL5420T Datasheet PDF : 17 Pages
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EL5420T
Absolute Maximum Ratings (TA = +25°C)
Supply Voltage between VS+ and VS- . . . . . . . . . . . . . . . . . . +19.8V
Input Voltage Range (VINx+, VINx-) . . . . . . . . . VS- -0.5V, VS+ +0.5V
Input Differential Voltage (VINx+ - VINx-) . . .(VS+ +0.5V)-(VS- -0.5V)
Maximum Continuous Output Current . . . . . . . . . . . . . . . . . ±70mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3000V
Thermal Information
Thermal Resistance Junction-to-Ambient (Typical)
θJA (°C/W)
16 Ld QFN (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . .
47
14 Ld SOIC (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .
88
14 Ld TSSOP (Note 2) . . . . . . . . . . . . . . . . . . . . . . .
100
Thermal Resistance Junction-to-Case (Typical)
θJC (°C/W)
16 Ld QFN (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . .
9
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +150°C
Power Dissipation Curves . . . . . . . . . . . . . . .See Figures 30 and 31
Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
3. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications VS+ = +5V, VS- = -5V, RL = 10kΩ to 0V, TA = +25°C, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN TYP MAX UNIT
INPUT CHARACTERISTICS
VOS
TCVOS
Input Offset Voltage
Average Offset Voltage Drift (Note 4)
VCM = 0V
14 LD TSSOP, SOIC package
16 LD QFN package
3
13
mV
7
µV/°C
2
µV/°C
IB
RIN
CIN
CMIR
Input Bias Current
Input Impedance
Input Capacitance
Common-Mode Input Range
VCM = 0V
2
50
nA
1
GΩ
2
pF
-5.5
+5.5
V
CMRR
Common-Mode Rejection Ratio
AVOL
Open Loop Gain
OUTPUT CHARACTERISTICS
For VINx from -5.5V to +5.5V
-4.5V ≤ VOUTx ≤ +4.5V
50
75
dB
75
105
dB
VOL
VOH
ISC
Output Swing Low
Output Swing High
Short Circuit Current
IOUT
Output Current
POWER SUPPLY PERFORMANCE
IL = -5mA
IL = +5mA
VCM = 0V, Source: VOUTx short to VS-,
Sink: VOUTx short to VS+
-4.94 -4.85
V
4.85 4.94
V
±200
mA
±70
mA
(VS+) - (VS-)
IS
PSRR
Supply Voltage Range
Supply Current (Per Amplifier)
Power Supply Rejection Ratio
VCM = 0V, No load
Supply is moved from ±2.25V to ±9.5V
4.5
19
V
500
750
µA
60
75
dB
DYNAMIC PERFORMANCE
SR
Slew Rate (Note 5)
-4.0V ≤ VOUTx ≤ +4.0V, 20% to 80%
12
V/µs
3
FN6838.0
September 25, 2009
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