EIA1314-8P Просмотр технического описания (PDF) - Excelics Semiconductor, Inc.
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EIA1314-8P Datasheet PDF : 1 Pages
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Excelics
EIA1314-8P
Not recommended for new designs. Contact factory. Effective 03/2003
13.75-14.5GHz, 8W Internally Matched Power FET
• 13.75-14.5GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
• HIGH PAE(25% TYPICAL)
• +39dBm TYPICAL P1dB OUTPUT POWER
• 7.0dB TYPICAL G1dB POWER GAIN
• NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
Vds=8V, Idsq=0.5 Idss
f=13.75-14.5GHz
Power Added Efficiency at 1dB compression
f=13.75-14.5GHz Vds=8V, Idsq=0.5 Idss
EIA1314-8P
MIN TYP MAX
38
39
6.0
7.0
25
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point f=13.75-14.5GHz
Vds=8V, Idsq=0.5 Idss
3520
46
Idss
Saturated Drain Current Vds=3V, Vgs=0V
4400 5760 6800
Gm
Transconductance
Vds=3V, Vgs=0V
6000
Vp
Pinch-off Voltage
Vds=3V, Ids=48mA
-1.0 -2.5
BVgd Drain Breakdown Voltage Igd=19.2mA
-13 -15
Rth
Thermal Resistance (Au-Sn Eutectic Attach)
2.3
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds
Drain-Source Voltage
12V
Vgs
Gate-Source Voltage
-8V
Ids
Drain Current
Idss
Igsf
Forward Gate Current
720mA
Pin
Input Power
Tch
Channel Temperature
Tstg
Storage Temperature
38dBm
175oC
-65/175oC
Pt
Total Power Dissipation
60W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
6240mA
120mA
@ 3dB Compression
150oC
-65/150oC
50W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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