EDS1232AASE Просмотр технического описания (PDF) - Elpida Memory, Inc

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производитель

EDS1232AASE

128M bits SDRAM(4M words ×32 bits)

Elpida Memory, Inc 

EDS1232AASE

Test Conditions

• AC high level input voltage / low level input voltage: 2.4V / 0.4V

• Input timing measurement reference level: 1.4V

• Transition time (Input rise and fall time): 1ns

• Output timing measurement reference level: 1.4V

• Termination voltage (Vtt): 1.4V

2.4V

CLK 1.4V

0.4V

Input

2.4V

1.4V

0.4V

Output

Output

tCK

tCH

tCL

tSETUP tHOLD

tAC

tOH

Z = 50 Ω

Vtt

50 Ω

30pF

Input Waveforms and Output Load

Data Sheet E0350E20 (Ver. 2.0)

7

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