EDF1AM Просмотр технического описания (PDF) - Vishay Semiconductors
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EDF1AM Datasheet PDF : 4 Pages
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www.vishay.com
EDF1AM, EDF1BM, EDF1CM, EDF1DM
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AM
EDF1BM
EDF1CM
EDF1DM
UNIT
Typical thermal resistance (1)
RJA
RJL
38
°C/W
12
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
EDF1DM-E3/45
0.418
45
BASE QUANTITY
50
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
1.0
0.75
0.5
0.25
Capacitive
Loads
IPK /IAV = 5.0
IPK /IAV = 10
IPK /IAV = 20
60 Hz Resistive
or Inductive Load
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Fig. 1 - Derating Curves Output Rectified Current
10
1
0.1
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
60
TJ = 150 °C
50
Single Sine-Wave
40
30
20
10
1.0 Cycle
0
1
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1000
100
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Revision: 16-Aug-13
2
Document Number: 88577
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