ECH8602M Просмотр технического описания (PDF) - SANYO -> Panasonic

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ECH8602M

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

SANYO -> Panasonic 

Ordering number : ENA1562A

ECH8602M

SANYO Semiconductors

DATA SHEET

ECH8602M

Features

• 2.5V drive

• Common-drain type

• Protection diode in

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

• Best suited for LiB charging and discharging switch

• Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Total Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

ID

IDP

PD

PT

Tch

Tstg

Conditions

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm2×0.8mm) 1unit

When mounted on ceramic substrate (900mm2×0.8mm)

Ratings

Unit

30

V

±12

V

6

A

60

A

1.4

W

1.5

W

150

°C

--55 to +150

°C

Package Dimensions

unit : mm (typ)

7011A-003

Top View

2.9

8

5

ECH8602M-TL-H

0.15

0 to 0.02

Product & Package Information

• Package

: ECH8

• JEITA, JEDEC

:-

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type : TL

Marking

TZ

TL

Lot No.

1

4

0.65

0.3

Bottom View

1 : Source1

2 : Gate1

3 : Source2

4 : Gate2

5 : Drain

6 : Drain

7 : Drain

8 : Drain

SANYO : ECH8

Electrical Connection

8

7

6

5

1

2

3

4

http://semicon.sanyo.com/en/network

71112 TKIM/21710PE TKIM TC-00002221 No. A1562-1/7

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